NTD4810NH
Power MOSFET
30 V, 54 A, Single N--Channel, DPAK/IPAK
Features
?
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low R G
These are Pb--Free Devices
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
10 m Ω @ 10 V
16.7 m Ω @ 4.5 V
I D MAX
54 A
Applications
? CPU Power Delivery
? DC--DC Converters
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
G
N--Channel
Drain--to--Source Voltage
Gate--to--Source Voltage
V DSS
V GS
30
? 20
V
V
S
Continuous Drain
Current (R θ JA ) (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
10.8
8.4
A
4
4
4
1
2 3
3
Power Dissipation
(R θ JA ) (Note 1)
Continuous Drain
Current (R θ JA ) (Note 2)
Power Dissipation
(R θ JA ) (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
2.0
8.6
6.7
1.28
W
A
W
1 2
3
DPAK
CASE 369AA
(Bent Lead)
1
2
3 IPAK IPAK
CASE 369AC CASE 369D
(Straight Lead) (Straight Lead
Continuous Drain
Current (R θ JC )
(Note 1)
T C = 25 ° C
T C = 85 ° C
I D
54
42
A
STYLE 2
MARKING DIAGRAMS
DPAK)
4
Power Dissipation
(R θ JC ) (Note 1)
Pulsed Drain Current    t p =10 m s
Current Limited by Package
T C = 25 ° C
T A = 25 ° C
T A = 25 ° C
P D
I DM
I DmaxPkg
50
120
45
W
A
A
4
Drain
& PIN ASSIGNMENTS
4
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T stg
I S
-- 55 to
175
41
° C
A
1
2
3
Source Gate Drain Source
1
2
3
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (V DD = 24 V, V GS = 10 V,
L = 0.3 mH, I L(pk) = 21 A, R G = 25 Ω )
dV/dt
E AS
6.0
66
V/ns
mJ
2
1 Drain 3
Gate
Gate Drain Source
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Y
WW
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
4810NH = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 3
1
Publication Order Number:
NTD4810NH/D
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相关代理商/技术参数
NTD4810NT4G 功能描述:MOSFET NFET 30V 54A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK
NTD4813N-1G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813N-35G 功能描述:MOSFET NFET 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NH 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK
NTD4813NH-1G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NH-35G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD4813NHT4G 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube